zowie technology corporation general purpose transistor halogen-free type npn silicon lead free product MMBT3904GH 1 2 1 2 3 3 sot-23 rating symbol value unit characteristic symbol min. max. unit collector-emitter voltage v ceo 40 vdc collector-base voltage v cbo 60 vdc emitter-base voltage v ebo 6.0 vdc collector current-continuous i c 200 madc characteristic symbol max. unit total device dissipation fr-5 board (1) t a =25 o c derate above 25 o c p d 225 1.8 mw mw / o c total device dissipation alumina substrate, (2) t a =25 o c derate above 25 o c p d v (br)cbo 300 2.4 60 - mw mw / o c thermal resistance junction to ambient 556 o c / w maximum ratings thermal characteristics electrical characteristics (t a =25 o c unless otherwise noted) v (br)ceo 40 - vdc vdc off characteristics r ja thermal resistance junction to ambient 417 o c / w r ja junction and storage temperature collector-base breakdowe voltage ( i c =10 uadc, i e =0 ) v (br)ebo 6.0 - vdc emitter-base breakdowe voltage ( i e =10 uadc, i c =0 ) collector-emitter breakdowe voltage (3) ( i c =1.0madc, i b =0 ) i bl - 50 nadc base cutoff current ( v ce =30 vdc, v eb =3.0 vdc ) i cex - 50 nadc collector cutoff current ( v ce =30 vdc, v eb =3.0 vdc ) -55 to +150 o c t j, t stg zowie t echnology corporation rev . 0 emitter base collector
zowie technology corporation characteristic symbol min. max. unit electrical characteristics (t a =25 o c unless otherwise noted) (continued) h fe 40 70 100 60 30 - - 300 - - - on characteristics (3) v ce (sat) vdc dc current gain ( i c =0.1 madc, v ce= 1.0 vdc ) ( i c =1.0 madc, v ce= 1.0 vdc ) ( i c =10 madc, v ce= 1.0 vdc ) ( i c =50 madc, v ce= 1.0 vdc ) ( i c =100 madc, v ce= 1.0 vdc ) collector-emitter saturation voltage (3) ( i c =10 madc, i b =1.0 madc ) ( i c =50 madc, i b =5.0 madc ) - - 0.2 0.3 v be (sat) vdc base-emitter saturation voltage (3) ( i c =10 madc, i b =1.0 madc ) ( i c =50 madc, i b =5.0 madc ) 0.65 - 0.85 0.95 f t c obo 300 - - 4.0 mh z small-signal characteristic c ibo pf pf current-gain-bandwidth product ( i c =10 madc, v ce =20 vdc, f=100 mh z ) output capacitance ( v cb =5.0 vdc, i e =0, f=1.0 mh z ) input capacitance ( v eb =0.5 vdc, i c =0, f=1.0 mh z ) input impedance ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) - 8.0 h ie k ohms 1.0 10 voltage feedback ratio ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) h re x 10 -4 0.5 8.0 small-signal current gain ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) h fe - 100 400 output admittance ( v ce =10 vdc, i c =1.0 madc, f=1.0 kh z ) h oe u mhos 1.0 40 noise figure ( v ce =5.0 vdc, i c =100 uadc, r s =1.0 k ohm, f=1.0 kh z ) n f db - 5.0 tr td - 35 switching characteristics ts ns rise time delay time storage time - 35 tf ns fall time ( v cc =3.0 vdc, v be =-0.5 vdc, i c =10 madc, i b1 =1.0 madc ) ( v cc =3.0 vdc, i c =10 madc, i b1 =i b2= 1.0 madc ) - - 200 50 (1) fr-5=1.0 x 0.75 x 0.062in. (2) alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) pulse test : pulse width 300us, duty cycle 2.0%. zowie t echnology corporation rev . 0 MMBT3904GH
zowie technology corporation rev. 0 zowie technology corporation MMBT3904GH figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit + 3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns 0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns - 9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500us * total shunt capacitance of test jig and connectors reverse bias voltage ( volts ) 2.0 3.0 5.0 7.0 10 1.0 0.1 i c , collector current ( ma ) 5000 1.0 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance ( pf ) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo t j =25 o c t j =125 o c typical transient characteristics v cc =40 v i c /i b =10 figure 3. capacitance figure 4. charge data q t q a figure 5. turn-on time i c , collector current ( ma ) 70 100 200 300 500 50 figure 6. rise time i c , collector current ( ma ) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t r , rise time ( ns ) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t d @ v ob =0 v t r @ v cc =3.0 v i c /i b =10 40 v 15 v 2.0 v
zowie technology corporation rev. 0 zowie technology corporation figure 7. storage time figure 8. fall time i c , collector current ( ma ) 70 100 200 300 500 50 5 10 30 7 20 70 100 200 300 500 50 5 10 30 7 20 t f , fall time ( ns ) t' s , storage time ( ns ) 1.0 2.0 3.0 10 20 70 100 5.0 7.0 30 50 200 i c /i b =20 i c /i b =20 i c /i b =10 i c /i b =10 i b1 /i b2 t' s = t s - 1 /8 t f i c , collector current ( ma ) 1.0 2.0 3.0 10 20 70 100 5.0 7.0 30 50 200 i c /i b =20 i c /i b =10 v cc =40 v i b1= i b2 figure 9. f, frequency (khz) 4 6 8 10 12 2 nf, noise figure ( bb ) 0 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 figure 10. r s , source resistance ( k ohms ) 0 4 6 8 10 12 14 2 nf, noise figure ( bb ) 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 source resistance=200 i c =1.0 ma source resistance=200 i c =0.5 ma source resistance=500 i c =100ua source resistance=1.0 k i c =50ua f = 1.0 kh z i c =1.0 ma i c =0.5 ma i c =50 ua i c =100 ua MMBT3904GH figure 11. current gain i c , collector current ( ma ) figure 12. output admittance i c , collector current ( ma ) h fe , current gain h oe , outputadmittance (umhos) 70 100 200 300 50 30 100 50 5 10 20 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0
zowie technology corporation rev. 0 zowie technology corporation figure 13. input impedance figure 15. dc current gain figure 14. voltage feedback ratio i c , collector current ( ma ) i c , collector current ( ma ) h re , voltage feedback ratio(x 10-4) h ie , input impedance (k ohms) 2.0 3.0 5.0 7.0 10 1.0 0.5 0.7 2.0 5.0 10 20 1.0 0.2 0.5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 i c , collector current ( ma ) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h fe , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 typical static characteristics t j = +25 o c t j = -55 o c t j = +125 o c v ce =1.0v MMBT3904GH figure 16. collector saturation region i b , base current ( ma ) 0.4 0.6 0.8 1.0 0.2 0.1 v ce , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.00.7 5.0 7.0 0.07 0.05 0.03 0.02 0.01 i c = 1.0 ma 10 ma 30 ma 100 ma t j = 25 o c
zowie technology corporation rev. 0 zowie technology corporation figure 17. " on " voltage figure 18. temperature coefficients i c , collector current ( ma ) i c , collector current ( ma ) coefficient ( mv / o c ) v, voltage ( volts ) 0.4 0.6 0.8 1.0 1.2 0.2 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 vb for v be (sat) vc for v ce (sat) +25 o c to +125 o c -55 o c to +25 o c -55 o c to +25 o c +25 o c to +125 o c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ i ce =1.0 v MMBT3904GH 1 2 3 2.95 0.15 2.30 0.20 0.13 0.05 1.90 0.15 1.00 0.11 0.40 0.05 1.30 0.10 0.50 +0.10 -0.05 0.05 +0.05 -0.04 0.50 +0.10 -0.05 1.0 +0.02 -0.11 case drawings sot-23 unit : mm
|
